BUJ303B Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ303B
VCC
IBon
-VBB
LC
LB
VCL(RBSOAR)
PROBE POINT
T.U.T.
Fig.13. Test Circuit for reverse bias safe operating
area.
V_cl ≤ 1000V; V_cc = 150V; V_BB = -5V; L_B = 1µH; L_c =
200µH
12
IC
(A) 10
8
6
4
2
0
0
200 400 ⁶⁰⁰ 800 1000 ¹²⁰⁰
VCLAMP (V)
Fig.14. Reverse bias safe operating area T_j ≤ T_jmax
102
IC
(A)
ICM _max
10
IC _max
1
Duty cycle = 0.01
tp=
II
(1)
10us
100us
(2)
1ms
I
10-1
III 10ms
DC
10-2 ₁
10
102
103
VCE (V)
Fig.15. Forward bias safe operating area. T_hs ≤ 25 ˚C
(1) P_tot max and P_tot peak max lines.
(2) Second breakdown limits.
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
III Extension during turn-on in single
transistor converters provided that
R_BE ≤ 100 Ω and t_p ≤ 0.6 µs.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of the
envelope.
March 2002
5
Rev 1.000