BUJ303B Datasheet, PDF (3/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ303B
+ VB
100-200R
+ 50v
25 mH
Pulse in
50R
Oscilloscope
Horizontal
Oscilloscope
Vertical
C.T.
Fig.1. Test circuit for V_CEOsust.
90 %
ICon
90 %
IC
ton
IB
10 %
tr 30ns
10 %
ts
tf
toff
IBon
-IBoff
Fig.4. Switching times waveforms with resistive load.
IC / mA
VCC
400
300
0
Fig.2.
VCE / V
min
VCEOsust
Oscilloscope display for V_CEOsust.
IBon
-VBB
LC
LB
T.U.T.
Fig.5. Test circuit inductive load.
V_CC = 350 V; -V_BE = 5 V; L_C = 300 uH; L_B = 1 uH
VCC
VIM
RB
0
tp
T
RL
T.U.T.
Fig.3. Test circuit resistive load. V_IM = -6 to +8 V
V_CC = 250 V; t_p = 20 µs; δ = t_p / T = 0.01.
R_B and R_L calculated from I_Con and I_Bon requirements.
ICon
90 %
IC
10 %
ts
tf
t
toff
IB
IBon
t
-IBoff
Fig.6. Switching times waveforms with inductive load.
March 2002
3
Rev 1.000