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| BUJ303B Datasheet, PDF (2/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ303B
STATIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
ICES,ICBO
ICES
Collector cut-off current 1
ICEO
IEBO
VCEOsust
VCEsat
Collector cut-off current 1
Emitter cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
VBEsat
hFE
hFEsat
Base-emitter saturation voltage
DC current gain
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ËC
VCEO = VCEOMmax(400V)
VEB = 9 V; IC = 0 A
IC = 300 mA; L = 25 mH
IC = 3 A; IB = 1 A
IC = 1 A; IB = 0.2 A
IC = 3 A; IB = 1 A
IC = 10 mA; VCE = 5 V
IC = 800 mA; VCE = 3 V
IC = 3 A; VCE = 1.5 V
MIN.
-
-
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
-
0.1 mA
-
-
0.1 mA
400
-
-
V
-
0.25 1.5
V
-
-
0.5
V
-
1.0 1.5
V
10
-
-
23 31 40
- 10.5 -
DYNAMIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
Switching times (resistive load)
ton
Turn-on time
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (inductive load)
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (inductive load)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
ICon = 2.5 A; IBon = 0.5 A IBoff = -1 A;
VCC = 250 V;
ICon = 2.5 A; IBon = 0.5 A; -VBB = 5 V;
LC = 300 µH; LB = 1 µH; VCC = 350 V
ICon = 2.5 A; IBon = 0.5 A; -VBB = 5 V;
LC = 300 µH; LB = 1 µH; VCC = 350 V;
Tj = 100 ËC
TYP. MAX. UNIT
1
-
µs
2.5
-
µs
0.3
-
µs
2
-
µs
200
-
ns
3
-
µs
300
-
ns
1 Measured with half sine-wave voltage (curve tracer).
March 2002
2
Rev 1.000
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