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| BUJ303A_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – NPN power transistor | |||
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NXP Semiconductors
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
ICES
collector-emitter cut-off VBE = 0 V; VCE = 1000 V; Tmb = 25 °C;
current
Measured with half-sine wave voltage
(curve tracer)
VBE = 0 V; VCE = 1000 V; Tj = 125 °C;
Measured with half-sine wave voltage
(curve tracer)
ICBO
collector-base cut-off VCB = 1000 V; IE = 0 A; Tmb = 25 °C;
current
Measured with half-sine wave voltage
(curve tracer)
ICEO
collector-emitter cut-off VCE = 500 V; IB = 0 A; Tmb = 25 °C;
current
Measured with half-sine wave voltage
(curve tracer)
IEBO
emitter-base cut-off VEB = 9 V; IC = 0 A; Tmb = 25 °C
current
VCEOsus
VCEsat
collector-emitter
sustaining voltage
collector-emitter
saturation voltage
IB = 0 A; IC = 100 mA; LC = 25 mH;
Tmb = 25 °C; see Figure 6; see Figure 7
IC = 3 A; IB = 0.6 A; Tmb = 25 °C;
see Figure 8; see Figure 9
VBEsat
base-emitter saturation IC = 3 A; IB = 0.6 A; Tmb = 25 °C;
voltage
see Figure 10
hFE
DC current gain
IC = 5 mA; VCE = 5 V; Tmb = 25 °C;
see Figure 11
IC = 500 mA; VCE = 5 V; Tmb = 25 °C;
see Figure 11
hFEsat
DC saturation current IC = 2.5 A; VCE = 5 V; Tmb = 25 °C;
gain
see Figure 11
IC = 3 A; VCE = 5 V; Tmb = 25 °C;
see Figure 11
Dynamic Characteristics (switching times - resistive load)
ts
turn-off delay time
IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A;
tf
fall time
RL = 75 â¦; Tmb = 25 °C; see Figure 12;
see Figure 13
Dynamic Characteristics (switching times - inductive load)
ts
turn-off delay time
IC = 2.5 A; IBon = 0.5 A; VBB = -5 V;
LB = 1 µH; Tmb = 25 °C; see Figure 14;
see Figure 15
ts
turn-off delay time
IC = 2.5 A; IBon = 0.5 A; VBB = -5 V;
LB = 1 µH; Tj = 100 °C; see Figure 14;
see Figure 15
tf
fall time
IC = 2.5 A; IBon = 0.5 A; VBB = -5 V;
LB = 1 µH; Tmb = 25 °C; see Figure 14;
see Figure 15
IC = 2.5 A; IBon = 0.5 A; VBB = -5 V;
LB = 1 µH; Tj = 100 °C; see Figure 14;
see Figure 15
BUJ303A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 â 8 February 2012
BUJ303A
NPN power transistor
Min Typ Max Unit
-
-
1
mA
-
-
2
mA
-
-
1
mA
-
-
0.1 mA
-
-
0.1 mA
500 -
-
V
-
0.35 1.5 V
-
1.01 1.3 V
10 22 35
14 25 35
10 13.5 17
-
11
-
-
3.3 4
µs
-
0.33 0.45 µs
-
1.4 1.6 µs
-
1.7 1.9 µs
-
145 160 ns
-
160 200 ns
© NXP B.V. 2012. All rights reserved.
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