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| BUJ303A_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – NPN power transistor | |||
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NXP Semiconductors
BUJ303A
NPN power transistor
102
IC
(A)
ICMm1a0x
ICmax
1
003aag029
duty cycle = 0.01
II(3)
tp = 10 µs
(1)
100 µs
10-1
(2)
1 ms
I(3)
10 ms
DC
Fig 4.
10-2
1
III(3)
10
102
103
VCEclamp (V)
(1) Ptot maximum and Ptot peak maximum lines.
(2) Second breakdown limits.
(3) I = Region of permissible DC operation.
II = Extension for repetitive pulse operation.
III = Extension during turn-on in single transistor converters provided that RBE ⤠100 ⦠and tp ⤠0.6 μs.
Forward bias safe operating area for Tmb ⤠25 °C
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to mounting base see Figure 5
thermal resistance from junction to ambient
in free air
Min Typ Max Unit
-
-
1.25 K/W
-
60 -
K/W
10
Zth(j-mb)
(K/W)
1 δ = 0.5
0.2
0.1
0.05
10-1
0.02
0
003aag030
Ptot
tp
δ=
T
10-2
10-5
10-4
10-3
10-2
10-1
tp
t
T
1
10
tp (s)
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse width
BUJ303A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 â 8 February 2012
© NXP B.V. 2012. All rights reserved.
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