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BUJ303A_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – NPN power transistor
BUJ303A
NPN power transistor
Rev. 6 — 8 February 2012
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed planar passivated NPN power switching transistor in a SOT78
(TO-220AB) plastic package.
1.2 Features and benefits
 Fast switching
 Low thermal resistance
 Very high voltage capability
 Very low switching and conduction
losses
1.3 Applications
 DC-to-DC converters
 High frequency electronic lighting
ballasts
 Inverters
 Motor control systems
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
IC
Ptot
VCESM
collector current
total power dissipation
collector-emitter peak
voltage
Static characteristics
hFE
DC current gain
Conditions
see Figure 1; see Figure 2; see Figure 4
Tmb ≤ 25 °C; see Figure 3
VBE = 0 V
IC = 5 mA; VCE = 5 V; Tmb = 25 °C;
see Figure 11
IC = 500 mA; VCE = 5 V; Tmb = 25 °C;
see Figure 11
Min Typ Max Unit
-
-
5
A
-
-
100 W
-
-
1000 V
10 22 35
14 25 35