BUJ303A Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ303A
VCC
IC/A
100
IBon
-VBB
LC
VCL
LB
T.U.T.
Fig.13. Test Circuit for reverse bias safe operating
area.
V_cl ≤ 1000V; V_cc = 150V; V_BB = -5V; L_B = 1µH; L_c =
200µH
IC/V
11
10
9
8
7
6
5
4
3
2
1
0
0
Fig.14.
200
400
600
800
VCE CLAMP/V
1,000
1,200
Reverse bias safe operating area T_j ≤ T_jmax
ICM max
10
IC max
1
0.1
Duty cycle = 0.01
II
(1)
tp=
10us
100us
1ms
(2)
I
10ms
DC
III
Fig.15.
0.01
1
10
100
1,000
VCE/V
Forward bias safe operating area. T_hs ≤ 25 ˚C
(1) P_tot max and P_tot peak max lines.
(2) Second breakdown limits.
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
III Extension during turn-on in single
transistor converters provided that
R_BE ≤ 100 Ω and t_p ≤ 0.6 µs.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of the
envelope.
September 1998
5
Rev 1.000