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| BUJ303A Datasheet, PDF (2/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ303A
STATIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
ICES,ICBO
ICES
Collector cut-off current 1
ICEO
IEBO
VCEOsust
VCEsat
VBEsat
hFE
hFE
hFEsat
Collector cut-off current 1
Emitter cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ËC
VCEO = VCEOMmax(500V)
VEB = 9 V; IC = 0 A
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 3 A; IB = 0.6 A
IC = 3 A; IB = 0.6 A
IC = 5 mA; VCE = 5 V
IC = 500 mA; VCE = 5 V
IC = 2.5 A; VCE = 5 V
IC = 3 A; VCE = 5 V
MIN.
-
-
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
-
0.1 mA
-
-
0.1 mA
500
-
-
V
-
0.25 1.5
V
-
0.97 1.3
V
10 22 35
14 25 35
10 13.5 17
-
12
-
DYNAMIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
Switching times (resistive load)
ton
Turn-on time
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (inductive load)
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (inductive load)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
ICon = 2.5 A; IBon = -IBoff = 0.5 A;
RL = 75 ohms; VBB2 = 4 V;
ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH;
-VBB = 5 V
ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ËC
TYP. MAX. UNIT
0.5 0.7 µs
3.3
4
µs
0.33 0.45 µs
1.4 1.6 µs
145 160 ns
1.7 1.9 µs
160 200 ns
1 Measured with half sine-wave voltage (curve tracer).
September 1998
2
Rev 1.000
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