BUJ303A Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ303A
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.7. Normalised power dissipation.
PD% = 100⋅PD/PD _25˚C = f (T_mb)
h _FE
100
5V
10
Tj = 25 C
1V
1
0.01
Fig.8.
0.1
1
10
IC / A
Typical DC current gain. h_FE = f(I_C)
parameter V_CE
VCEsat/V
2.0
1.6
IC=1A 2A 3A 4A
1.2
0.8
0.4
0.0
0.01
0.10
1.00
IB/A
10.00
Fig.9. Collector-Emitter saturation voltage.
Solid lines = typ values, V_CEsat = f(IB); T_j=25˚C.
VBEsat/V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
1.0
10.0
IC/A
Fig.10. Base-Emitter saturation voltage.
Solid lines = typ values, V_BEsat = f(IC); at IC/IB =4.
VCEsat/V
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
10.0
IC/A
Fig.11. Collector-Emitter saturation voltage.
Solid lines = typ values, V_CEsat = f(IC); at IC/IB =4.
Zth / (K/W)
10
1
D= 0.5
0.2
0.1
0.1 ^0.05
0.02
0
P_D
tp
tp
D= _T
T
t
0.01
1E-06
1E-04
1E-02
t/s
1E+00
Fig.12. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
September 1998
4
Rev 1.000