BUJ100_15 Datasheet, PDF (5/10 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

NXP Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ100
VCEsat VOLTAGE/V
2
1.5
125 C
1
0.5
IC/IB = 3
25 C
0
0.01
0.1
IC, COLLECTOR CURRENT/A
-40 C
1
2
Fig.7. Collector-Emitter saturation voltage.
Solid Lines = typ values, I_C/I_B = 3
VBEsat VOLTAGE/V
1.5
1.4
1.3
IC/IB = 3
1.2
1.1
1
0.9
25 C
-40 C
0.8
0.7
0.6
125 C
0.5
0.01
0.1
IC, COLLECTOR CURRENT/A
1
2
Fig.8. Base-Emitter saturation voltage.
Solid Lines = typ values, I_C/I_B = 3
INDUCTIVE SWITCHING
VCC
IBon
-VBB
LC
LB
T.U.T.
Fig.9. Test circuit inductive load.
V_CC = 300 V; -V_BE = 5 V, L_C = 200 µH; L_B = 1 µH
tfi (ns)
275
250
225
IC = 2A
200
175
IC = 1.5A
150
125
100
75
IC = 1A
50
25
0
2
4
6
8
10
11
HFE GAIN (IC/IB)
Fig.11. Inductive switching.
tfi = f(h_FE)
ICon
90 %
IC
10 %
ts
tf
t
toff
IB
IBon
t
-IBoff
Fig.10. Switching times waveforms with inductive load.
tfi (ns)
275
250
225
IC/IB = 10
200
175
150
125
100
IC/IB =3
75
50
25
IC/IB = 5
0
0.8
1
1.2
1.4
1.6
1.8
2
2.2
IC COLLECTOR CURRENT /A
Fig.12. Inductive switching.
tfi = f(I_C)
September 1999
4
Rev 1.000