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| BUJ100_15 Datasheet, PDF (3/10 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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NXP Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ100
STATIC CHARACTERISTICS
Tlead = 25 ËC unless otherwise specified
SYMBOL PARAMETER
ICES,ICBO
ICES
Collector cut-off current 1
ICEO
IEBO
VCEOsust
Collector cut-off current
Emitter cut-off current
Collector-emitter sustaining voltage
VCEsat
VBEsat
Collector-emitter saturation voltage
Base-emitter saturation voltage
hFE
DC current gain
hFE
hFE
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ËC
VCEO = VCEOMmax(400V)
VEB = 9 V; IC = 0 A
IB = 0 A; IC = 10mA;
L = 25 mH
IC = 0.75 A;IB = 0.15 A
IC = 0.75 A; IB =0.15 A
IC = 10mA; VCE = 5 V
IC = 100mA; VCE = 5 V
IC = 0.75 A; VCE = 5 V
MIN.
-
-
-
-
400
-
-
11
12.5
9
TYP. MAX. UNIT
0.8 100 µA
2.0 500 µA
-
100 µA
0.05 100 µA
-
-
V
0.24 1.0
V
0.93 1.3
V
20 27
21 31
14 20
DYNAMIC CHARACTERISTICS
Tlead = 25 ËC unless otherwise specified
SYMBOL PARAMETER
Switching times (resistive load)
ton
Turn-on time
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (inductive load)
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (inductive load)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
ICon = 1.0 A; IBon = -IBoff = 200mA;
RL = 75 ohms; VBB2 = 4 V;
ICon = 1.0 A; IBon = 200mA; LB = 1 µH;
-VBB = 5 V
ICon = 1.0 A; IBon = 200mA; LB = 1 µH;
-VBB = 5 V; Tj = 100 ËC
TYP. MAX. UNIT
0.65 0.88 µs
0.88 1.2 µs
250 338 ns
0.51 0.7 µs
50 70 ns
-
1.4 µs
-
130 ns
1 Measured with half sine-wave voltage (curve tracer).
September 1999
2
Rev 1.000
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