BU4522AF Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4522AF
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.13. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25˚C}
Zth / (K/W)
10
BU4522AF
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
P_D
tp
D
=
tp
T
0
0.001
1.0E-07
1.0E-05
1.0E-03
t/s
T
t
1.0E-01
1.0E-01
Fig.14. Transient thermal impedance.
VCC
IC / A
30
BU2522AF
20
10
0
0
500
1000
1500
VCE / V
Fig.16. Reverse bias safe operating area. T_j ≤ T_jmax
Ic(sat) (A)
10
9
8
7
6
5
4
3
2
1
0 _{0 10}
20 30 40 50 60 70
Horizontal frequency (kHz)
80 90 100
Fig.17. I_Csat during normal running vs. frequency of
operation for optimum performance
IBend
-VBB
LC
LB
T.U.T.
Fig.15. Test Circuit RBSOA.
VCL
CFB
December 1997
5
Rev 1.000