BU4522AF Datasheet, PDF (2/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4522AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_isol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree
three terminals to external
heatsink
C_isol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
- 2500 V
-
22
-
pF
STATIC CHARACTERISTICS
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
I_CES
Collector cut-off current ²
I_CES
I_EBO
BV_EBO
V_CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
V_CEsat
V_BEsat
h_FE
h_FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
V_BE = 0 V; V_CE = V_CESMmax
V_BE = 0 V; V_CE = V_CESMmax;
T_j = 125 ˚C
V_EB = 7.5 V; I_C = 0 A
I_B = 1 mA
I_B = 0 A; I_C = 100 mA;
L = 25 mH
I_C = 7 A; I_B = 1.75 A
I_C = 7 A; I_B = 1.75 A
I_C = 1 A; V_CE = 5 V
I_C = 7 A; V_CE = 5 V
MIN.
-
-
-
7.5
800
-
0.85
-
4.2
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
1.0 mA
13.5 -
V
-
-
V
-
3.0
V
0.94 1.03 V
10
-
5.8 7.3
DYNAMIC CHARACTERISTICS
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Switching times (16 kHz line
deflection circuit)
t_s
Turn-off storage time
t_f
Turn-off fall time
Switching times (64 kHz line
deflection circuit)
t_s
Turn-off storage time
t_f
Turn-off fall time
CONDITIONS
f = 16 kHz; I_Csat = 7 A; I_B1 = 1.4 A;
(I_B2 = -3.5 A)
f = 64 kHz; I_Csat = 6 A; I_B1 = 1.2 A;
(I_B2 = -3.6 A)
TYP. MAX. UNIT
3.5 4.3 µs
285 400 ns
2.3 2.7 µs
170 230 ns
2 Measured with half sine-wave voltage (curve tracer).
December 1997
2
Rev 1.000