BU4522AF Datasheet, PDF (3/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4522AF
+ 50v
100-200R
Horizontal
Oscilloscope
Vertical
100R
1R
6V
30-60 Hz
Fig.1. Test circuit for V_CEOsust.
IC / mA
250
200
100
0
VCE / V
min
VCEOsust
Fig.2. Oscilloscope display for V_CEOsust.
TRANSISTOR
IC
DIODE
ICsat
t
IB
VCE
20us
26us
64us
IB1
t
IB2
t
Fig.3. Switching times waveforms (16 kHz).
TRANSISTOR
IC
DIODE
ICsat
t
IB
IB1
5 us
6.5 us
t
IB2
16 us
VCE
t
Fig.4. Switching times waveforms (64 kHz).
ICsat
90 %
IC
ts
IB
IB1
10 %
tf
t
t
- IB2
Fig.5. Switching times definitions.
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
LB
T.U.T.
Cfb
Fig.6. Switching times test circuit.
December 1997
3
Rev 1.000