BU2725DF Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2725DF
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.9. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (T_hs)
Zth / (K/W)
10
BU2525AF
1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
P_D
tp
D
=
tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
T
t
1E+00
Fig.10. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
VCC
IBend
-VBB
LC
LB
T.U.T.
VCL
CFB
Fig.11. Test Circuit RBSOA.
V_CC = 150 V; -V_BB = 1 - 4 V;
L_C = 1 mH; V_CL = 1500 V; L_B = 0.5 - 2 µH;
C_FB = 1 - 3 nF; I_B(end) = 0.8 - 4 A
IC / A
35
BU2727A/AF/D/DF
30
25
Area where
20
fails occur
15
10
5
0
100
1000
1700
VCE / V
Fig.12. Reverse bias safe operating area. T_j ≤ T_jmax
September 1997
5
Rev 1.100