BU2725DF Datasheet, PDF (3/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
TRANSISTOR
IC
DIODE
ICsat
t
IB
VCE
20us
26us
64us
IBend
t
t
Fig.1. Switching times waveforms (16 kHz).
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.2. Switching times definitions.
Product specification
BU2725DF
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
D.U.T.
LB
Cfb
Rbe
Fig.3. Switching times test circuit.
hFE
100
VCE = 5 V
10
BU2727D/DF
Ths = 25 C
Ths = 85 C
1
0.01
0.1
1
10
100
IC / A
Fig.4. DC current gain. h_FE = f (I_C)
Parameter T_hs
(Low and high gain)
September 1997
3
Rev 1.100