BU2725DF Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2725DF
hFE
100
VCE = 1 V
10
BU2727D/DF
Ths = 25 C
Ths = 85 C
1
0.01
0.1
1
10
100
IC / A
Fig.5. DC current gain. h_FE = f (I_C)
Parameter T_hs
(Low and high gain)
VCEsat / V
10
Ths = 85 C
Ths = 25 C
1
IC/IB = 12
0.1
BU2727D/DF
IC/IB = 5
0.01
0.1
1
10
100
IC / A
Fig.6. Typical collector-emitter saturation voltage.
V_CEsat = f (I_C); parameter I_C/I_B
VBEsat / V
1
IC = 6 A
0.9
BU2727D/DF
0.8
4A
0.7
Ths = 85 C
Ths = 25 C
0.6
0
Fig.7.
1
2
3
4
IB / A
Typical base-emitter saturation voltage.
V_BEsat = f (I_B); parameter I_C
ts/tf/ us
10
BU2527AFX,DFX
9
8
7
6
5
4
3
2
1
0
0
1
2
3
IB / A 4
Fig.8. Limit storage and fall time.
t_s = f (I_B); tf = f (I_B); T_hs = 85˚C; f = 16 kHz
September 1997
4
Rev 1.100