BU2722DF Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Preliminary specification
BU2722DF
VCC
IBend
-VBB
LC
LB
T.U.T.
VCL
CFB
Fig.11. Test Circuit RBSOA. V_CC = 150 V;
-V_BB = 1 - 4 V;
L_C = 1 mH; V_CL = 1500 V; L_B = 0.5 - 2 µH;
C_FB = 1 - 6 nF; I_B(end) = 0.7 - 4 A
IC / A
26
BU2720AF/DF
24
22
20
18
Area where
16
fails occur
14
12
10
8
6
4
2
0
100
1000
1700
VCE / V
Fig.12. Reverse bias safe operating area. T_j ≤ T_jmax
November 1995
5
Rev 1.000