BU2722DF Datasheet, PDF (1/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Preliminary specification
BU2722DF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
full-pack envelope. Intended for use in horizontal deflection circuits of high resolution monitors. Suitable for
operation up to 64 kHz, designed to withstand V_CES pulses up to 1700 V.
QUICK REFERENCE DATA
SYMBOL
V_CESM
V_CEO
I_C
I_CM
P_tot
V_CEsat
I_Csat
t_s
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
V_BE = 0 V
T_hs ≤ 25 ˚C
I_C = 4.5 A; I_B = 1.0 A
I_CM = 4.5 A; I_B(end) = 0.7 A
TYP.
-
-
-
-
-
-
4.5
1.9
MAX.
1700
825
10
25
45
1
-
2.25
UNIT
V
V
A
A
W
V
A
µs
PINNING - SOT199
PIN
DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
1 23
SYMBOL
c
b
Rbe
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_CESM
V_CEO
I_C
I_CM
I_B
I_BM
-I_B(AV)
-I_BM
P_tot
T_stg
T_j
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value ¹
Total power dissipation
Storage temperature
Junction temperature
V_BE = 0 V
average over any 20 ms period
T_hs ≤ 25 ˚C
ESD LIMITING VALUES
SYMBOL PARAMETER
CONDITIONS
V_C
Electrostatic discharge capacitor voltage Human body model (250 pF,
1.5 kΩ)
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1700
825
10
25
10
20
150
20
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
MIN. MAX. UNIT
-
10 kV
1 Turn-off current.
November 1995
1
Rev 1.000