BU2722DF Datasheet, PDF (2/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Preliminary specification
BU2722DF
THERMAL RESISTANCES
SYMBOL
R_{th j-hs}
R_{th j-hs}
R_{th j-a}
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_isol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree
three terminals to external
heatsink
C_isol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
22
-
pF
STATIC CHARACTERISTICS
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
I_CES
Collector cut-off current ²
I_CES
I_EBO
B_VEBO
R_EB
V_CEsat
V_BEsat
V_F
h_FE
h_FE
Emitter cut-off current
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Diode forward voltage
DC current gain
CONDITIONS
V_BE = 0 V; V_CE = V_CESMmax
V_BE = 0 V; V_CE = V_CESMmax;
T_j = 125 ˚C
V_EB = 7.5 V; I_C = 0 A
I_B = 1 mA
V_EB = 7.5 V
I_C = 4.5 A; I_B = 1.0 A
I_C = 4.5 A; I_B = 1.0 A
I_F = 4.5 A
I_C = 1.0 A; V_CE = 5 V
I_C = 4.5 A; V_CE = 1 V
MIN.
-
-
85
7.5
-
0.79
14
4.5
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
150 mA
13.5 -
V
65
Ω
-
1.0
V
0.87 0.96 V
1.6
V
19 26
7
10
DYNAMIC CHARACTERISTICS
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Switching times (64 kHz line
deflection circuit)
t_s
Turn-off storage time
t_f
Turn-off fall time
CONDITIONS
I_CM = 4.5 A; L_C = 260 µH; C_fb = 4.8 nF;
V_CC = 160 V; I_B(end) = 0.7 A;
L_B = 0.6 µH; -V_BB = 2 V;
TYP.
1.9
0.4
MAX.
2.25
0.48
UNIT
µs
µs
2 Measured with half sine-wave voltage (curve tracer).
November 1995
2
Rev 1.000