BU2527DX Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2527DX
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.13. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25˚C} = f (T_hs)
Zth / (K/W)
10
BU2525AF
1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
P_D
tp
D
=
tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
T
t
1E+00
Fig.14. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
IC / A
30
BU2527AF
20
10
0
0
500
1000
VCE / V
1500
Fig.15. Reverse bias safe operating area. T_j ≤ T_jmax
IC / A
100
ICM
ICDC
10
= 0.01
Ptot
1
BU2525AF
tp =
40 us
100 us
1 ms
0.1
10 ms
DC
0.01
1
10
100
1000 VCE / V
Fig.16. Forward bias safe operating area. T_hs = 25 ˚C
I_CDC & I_CM = f(V_CE); I_CM single pulse; parameter t_p
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.
September 1997
5
Rev 1.200