BU2527DX Datasheet, PDF (3/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2527DX
TRANSISTOR
IC
DIODE
ICsat
t
IB
I _B end
t
5 us
6.5 us
16 us
VCE
t
Fig.1. Switching times waveforms.
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
D.U.T.
LB
Cfb
Rbe
Fig.4. Switching times test circuit.
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.2. Switching times definitions.
I
F
I
F
10%
t _fr
time
VF
5V
V _fr
VF
time
Fig.3. Definition of anti-parallel diode V_fr and t_fr
VCC
IBend
-VBB
LC
LB
Rbe ^T.U.T.
VCL
CFB
Fig.5. Test Circuit RBSOA. V_CC = 140 V; -V_BB = 4 V;
L_C = 100 - 200 µH; V_CL ≤ 1500 V; L_B = 3 µH;
C_FB = 1 - 2.2 nF; I_B(end) = 1 - 2 A
hFE
100
BU2525DF
Tj = 25 C
5V
Tj = 125 C
10
1V
1
0.1
Fig.6.
1
10
100
IC / A
Typical DC current gain. h_FE = f (I_C)
parameter V_CE
September 1997
3
Rev 1.200