BU2527DX Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2527DX
1.2 ^{VBESAT / V}
Tj = 25 C
1.1
Tj = 125 C
1
BU2525AF
0.9
0.8
0.7
IC/IB=
3
0.6
4
0.5
5
0.4
0.1
1
10
IC / A
Fig.7. Typical base-emitter saturation voltage.
V_BEsat = f (I_C); parameter I_C/I_B
VCESAT / V
1
0.9
0.8
0.7
0.6
IC/IB =
5
4
3
BU2525AF
0.5
Tj = 25 C
0.4
Tj = 125 C
0.3
0.2
0.1
0
0.1
1
10
100
IC / A
Fig.8. Typical collector-emitter saturation voltage.
V_CEsat = f (I_C); parameter I_C/I_B
1.2 ^{VBESAT / V}
Tj = 25 C
1.1
Tj = 125 C
BU2525AF
1
0.9
0.8
0.7
0.6
0
Fig.9.
IC=
8A
6A
5A
4A
1
2
3
4
IB / A
Typical base-emitter saturation voltage.
V_BEsat = f (I_B); parameter I_C
VCESAT / V
10
BU2525AF
Tj = 25 C
Tj = 125 C
8A
1
6A
5A
IC = 4 A
0.1
0.1
1
10
IB / A
Fig.10. Typical collector-emitter saturation voltage.
V_CEsat = f (I_B); parameter I_C
Poff / W
100
BU2527AF
IC =
6A
10
5A
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
IB / A
Fig.11. Typical turn-off losses. T_j = 85˚C
Eoff = f (I_B); parameter I_C; f = 64 kHz
ts, tf / us
4
BU2527AF
3.5
3
2.5
2
IC =
1.5
6A
5A
1
0.5
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
IB / A
Fig.12. Typical collector storage and fall time.
ts = f (I_B); tf = f (I_B); parameter I_C; T_j = 85˚C; f = 64 kHz
September 1997
4
Rev 1.200