BU2523DF Datasheet, PDF (5/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2523DF
VCC
IBend
-VBB
LC
LB
T.U.T.
VCL
CFB
Fig.13. Test Circuit RBSOA. V_CC = 150 V;
-V_BB = 1 - 5 V;
L_C = 1.5 mH; V_CL = 1450 V; L_B = 0.3 - 2 µH;
C_FB = 0.5 - 8 nF; I_B(end) = 0.55 - 1.1 A
IC / A
30
BU2523
20
Area where
fails occur
10
0
100
1000 1500
VCE / V
Fig.14. Reverse bias safe operating area. T_j ≤ T_jmax
Ic(sat) (A)
8
BU2523AF/AX
7
6
5
4
3
2
1
0
0
10 20 30 40 50 60 70 80
frequency (kHz)
Fig.15. I_Csat during normal running vs. frequency of
operation for optimum performance
September 1997
5
Rev 1.200