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| BU2523DF Datasheet, PDF (2/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2523DF
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all R.H. ⤠65 % ; clean and dustfree
three terminals to external
heatsink
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 2
ICES
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Rbe
VCEsat
VBEsat
hFE
hFE
VF
Base-emitter resistance
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ËC
VEB = 6.0 V; IC = 0 A
IB = 600 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
VEB = 7.5 V
IC = 5.5 A; IB = 1.1 A
IC = 5.5 A; IB = 1.1 A
IC = 1.0 A; VCE = 5 V
IC = 5.5 A; VCE = 5 V
IF = 5.5 A
MIN.
-
-
80
7.5
800
-
-
-
-
5
-
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
130 170 mA
13.5 -
V
-
-
V
46
-
â¦
-
5.0
V
-
1.0
V
12
-
7.5 10.8
-
2.2
V
DYNAMIC CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
Switching times (64 kHz line
deflection circuit)
ts
Turn-off storage time
tf
Turn-off fall time
Vfr
Anti-parallel diode forward recovery
voltage
tfr
Anti-parallel diode forward recovery
time
CONDITIONS
ICsat = 5.5 A; LC = 200 µH; Cfb = 4 nF;
VCC = 145 V; IB(end) = 0.56 A;
LB = 0.4 µH; -VBB = -4 V;
-IBM = 3.3 A
IF = 5.5 A; dIF/dt = 50 A/µs
VF = 5 V
TYP. MAX. UNIT
1.5
2
µs
0.15 0.3 µs
16.5 -
V
375
-
ns
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
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