BU2523DF Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2523DF
VCEsat / V
10
Ths = 25 C
Ths = 85 C
1
IC/IB = 10
0.1
BU2523DF/X
IC/IB = 5
0.01
0.1
1
10
100
IC / A
Fig.7. Typical collector-emitter saturation voltage.
V_CEsat = f (I_C); parameter I_C/I_B
VBEsat / V
1.2
1.1
IC = 6 A
1
BU2523DF/X
Ths = 25 C
Ths = 85 C
0.9
0.8
IC = 4.5 A
0.7
0.6
0
1
2
3
4
IB / A
Fig.8. Typical base-emitter saturation voltage.
V_BEsat = f (I_B); parameter I_C
PTOT / W
100
BU2523AF/DF/AX/DX
Ths = 25 C
Ths = 85 C
10
1
0
0.5
1
1.5
2
IB / A
Fig.9. Typical losses.
P_TOT = f (I_B); I_C = 5.5 A; f = 64 kHz
ts/tf / us
5
BU2523AF/DF/AX/DX
4
3
2
1
0
0
0.5
1
1.5
2
IB / A
Fig.10. Typical collector storage and fall time.
ts = f (I_B); tf = f (I_B); I_C = 5.5 A; T_j = 85˚C; f = 64 kHz
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.11. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25˚C} = f (T_mb)
Zth / (K/W)
10
BU2525AF
1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
P_D
tp
D
=
tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
T
t
1E+00
Fig.12. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
September 1997
4
Rev 1.200