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BTA312-600B Datasheet, PDF (5/11 Pages) NXP Semiconductors – 3Q Hi-Com Triac
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NXP Semiconductors
BTA312-600B
3Q Hi-Com Triac
10
Zth(j-mb)
(K/W)
1
(1)
10-1
(2)
10-2
003aab775
PD
10-3
10-5
10-4
10-3
10-2
10-1
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
tp
t
1
10
tp (s)
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
IGT
gate trigger current
IL
latching current
IH
holding current
VT
on-state voltage
VGT
gate trigger voltage
ID
off-state current
BTA312-600B
Product data sheet
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 15 A; Tj = 25 °C; Fig. 10
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
VD = 600 V; Tj = 125 °C
All information provided in this document is subject to legal disclaimers.
4 October 2012
Min Typ Max Unit
2
-
50
mA
2
-
50
mA
2
-
50
mA
-
-
60
mA
-
-
90
mA
-
-
60
mA
-
-
60
mA
-
1.3 1.6 V
0.25 0.4 -
V
-
0.8 1.5 V
-
0.1 0.5 mA
© NXP B.V. 2012. All rights reserved
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