BTA312-600B Datasheet, PDF (1/11 Pages) NXP Semiconductors – 3Q Hi-Com Triac

BTA312-600B
3Q Hi-Com Triac
4 October 2012
Product data sheet
1. Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic
package intended for use in circuits where high static and dynamic dV/dt and high dI/dt
can occur. This "series B" triac will commutate the full RMS current at the maximum rated
junction temperature without the aid of a snubber.
1.2 Features and benefits
• 3Q technology for improved noise immunity
• High commutation capability with maximum false trigger immunity
• High voltage capability
• Less sensitive gate for highest noise immunity
• Planar passivated for voltage ruggedness and reliability
• Triggering in three quadrants only
• Very high immunity to false turn-on by dV/dt
1.3 Applications
• Electronic thermostats (heating and cooling)
• High power motor controls e.g. washing machines and vacuum cleaners
• Rectifier-fed DC inductive loads e.g. DC motors and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DRM
repetitive peak off-
state voltage
I_TSM
non-repetitive peak on- full sine wave; T_j(init) = 25 °C;
state current
t_p = 20 ms; Fig. 4; Fig. 5
I_T(RMS)
RMS on-state current full sine wave; T_mb ≤ 100 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I_GT
gate trigger current
V_D = 12 V; I_T = 0.1 A; T2+ G+;
T_j = 25 °C; Fig. 7
V_D = 12 V; I_T = 0.1 A; T2+ G-;
T_j = 25 °C; Fig. 7
Min Typ Max Unit
-
-
600 V
-
-
100 A
-
-
12
A
2
-
2
-
50
mA
50
mA
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