BTA312-600B Datasheet, PDF (3/11 Pages) NXP Semiconductors – 3Q Hi-Com Triac

NXP Semiconductors
BTA312-600B
3Q Hi-Com Triac
Symbol
I²t
dI_T/dt
I_GM
P_GM
P_G(AV)
T_stg
T_j
Parameter
Conditions
I²t for fusing
t_p = 10 ms; SIN
rate of rise of on-state current I_T = 20 A; I_G = 0.2 A; dI_G/dt = 0.2 A/µs
peak gate current
peak gate power
average gate power
over any 20 ms period
storage temperature
junction temperature
15
IT(RMS )
(A)
10
003a a b686
50
IT(RMS )
(A)
40
30
Min Max Unit
-
50
A²s
-
100 A/µs
-
2
A
-
5
W
-
0.5 W
-40 150 °C
-
125 °C
003a a b687
20
5
10
0
-5 0
0
50
100
150
Tmb (°C)
010_-2
10^-1
1
10
s urge duration (s )
Fig. 1.
RMS on-state current as a function of mounting
base temperature; maximum values
Fig. 2.
f = 50 Hz; T_mb = 100 °C
RMS on-state current as a function of surge
duration; maximum values
16
P_tot
(W)
conduction form
angle factor
(degrees) a
30
4
12
60
2.8
90
2.2
α
120
1.9
180
1.57
8
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α = 180°
120°
90°
60°
30°
4
0
0
3
6
9
12
I_T(RMS) (A)
α = conduction angle
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
BTA312-600B
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 October 2012
© NXP B.V. 2012. All rights reserved
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