BTA212X_F Datasheet, PDF (5/9 Pages) NXP Semiconductors – Three quadrant triacs guaranteed commutation

NXP Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA212X series D, E and F
20 ^{Ptot / W}
15
1
10
5
Ths(max) / C ₄₅
= 180
120
65
90
60
30
85
105
0
125
0
5
10
15
IT(RMS) / A
Fig.1. Maximum on-state dissipation, P_tot, versus rms
on-state current, I_T(RMS), where α = conduction angle.
1000 ^{ITSM / A}
dI_T/dt limit
100
IT
ITSM
T
time
10
10us
100us
Tj initial = 25 C max
1ms
10ms
100ms
T/s
Fig.2. Maximum permissible non-repetitive peak
on-state current I_TSM, versus pulse width t_p, for
sinusoidal currents, t_p ≤ 20ms.
100 ^{ITSM / A}
80
60
IT
ITSM
T
time
Tj initial = 25 C max
40
20
01
10
100
1000
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current I_TSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
IT(RMS) / A
15
10
BT138X
56 C
5
0-50
0
50
100
150
Ths / C
Fig.4. Maximum permissible rms current I_T(RMS) ,
versus heatsink temperature T_hs.
25 ^{IT(RMS) / A}
20
15
10
5
0
0.01
0.1
1
10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current I_T(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; T_hs ≤ 56˚C.
VGT(Tj)
1.6 ^{VGT(25 C)}
1.4
1.2
1
0.8
0.6
0.4-50
0
50
100
150
Tj / C
Fig.6. Normalised gate trigger voltage
V_GT(T_j)/ V_GT(25˚C), versus junction temperature T_j.
June 2003
4
Rev 3.000