BTA212X_F Datasheet, PDF (3/9 Pages) NXP Semiconductors – Three quadrant triacs guaranteed commutation

NXP Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA212X series D, E and F
ISOLATION LIMITING VALUE & CHARACTERISTIC
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_isol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
C_isol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
- 2500 V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-hs}
Thermal resistance
junction to heatsink
R_{th j-a}
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
MIN. TYP. MAX. UNIT
-
-
4.0 K/W
-
-
5.5 K/W
-
55
- K/W
STATIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
I_GT
Gate trigger current²
I_L
Latching current
I_H
Holding current
V_T
On-state voltage
V_GT
Gate trigger voltage
I_D
Off-state leakage current
CONDITIONS
BTA212X-
V_D = 12 V; I_T = 0.1 A
T2+ G+
T2+ G-
T2- G-
V_D = 12 V; I_GT = 0.1 A
T2+ G+
T2+ G-
T2- G-
MIN.
MAX.
UNIT
...D ...E ...F
-
5
10
25 mA
-
5
10
25 mA
-
5
10
25 mA
-
15
25
30 mA
-
25
30
40 mA
-
25
30
40 mA
V_D = 12 V; I_GT = 0.1 A
-
15
25
30 mA
I_T = 17 A
-
1.6
V
V_D = 12 V; I_T = 0.1 A
-
1.5
V
V_D = 400 V; I_T = 0.1 A;
0.25
-
V
T_j = 125 ˚C
V_D = V_DRM(max); T_j = 125 ˚C
-
0.5
mA
2 Device does not trigger in the T2-, G+ quadrant.
June 2003
2
Rev 3.000