BTA212X_F Datasheet, PDF (4/9 Pages) NXP Semiconductors – Three quadrant triacs guaranteed commutation

NXP Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA212X series D, E and F
DYNAMIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
dV_D/dt
Critical rate of rise of
off-state voltage
dI_com/dt
Critical rate of change of
commutating current
dI_com/dt
Critical rate of change of
commutating current
CONDITIONS
BTA212X-
V_DM = 67% V_DRM(max);
T_j = 110 ˚C; exponential
waveform; gate open
circuit
V_DM = 400 V; T_j = 125 ˚C;
I_T(RMS) = 12 A;
dV_com/dt = 10 V/µs; gate
open circuit
V_DM = 400 V; T_j = 125 ˚C;
I_T(RMS) = 12 A;
dV_com/dt = 0.1 V/µs; gate
open circuit
...D
30
1.0
3.5
MIN.
...E
60
8.0
16
MAX. UNIT
...F
70
-
V/µs
21
- A/ms
32
- A/ms
June 2003
3
Rev 3.000