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BTA208XD Datasheet, PDF (5/7 Pages) NXP Semiconductors – Three quadrant triacs guaranteed commutation
Philips Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA208X series D, E and F
IGT(Tj)
IGT(25°C)
3
2.5
T2+ G+
T2+ G-
T2- G-
2
1.5
1
0.5
0
-50
0
50
100
150
Tj/°C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj)
IL(25 C)
3
2.5
2
1.5
1
0.5
0
-50
Fig.8.
0
50
100
150
Tj / C
Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
IH(Tj)
3 IH(25C)
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
25 IT / A
Tj = 125 C
Tj = 25 C
20
typ
Vo = 1.264 V
Rs = 0.0378 Ohms
15
max
10
5
0
0
0.5
1
1.5
2
2.5
3
VT / V
Fig.10. Typical and maximum on-state characteristic.
10 Zth j-hs (K/W)
with heatsink compound
without heatsink compound
1
unidirectional
bidirectional
0.1
P
D
tp
t
0.01
10us 0.1ms 1ms 10ms 0.1s
1s
10s
tp / s
Fig.11. Transient thermal impedance Zth j-hs, versus
pulse width tp.
dIcom/dt (A/ms)
100
F TYPE
E TYPE
D TYPE
10
1
20
40
60
80
100
120
140
Tj/˚C
Fig.12. Miniumum, critical rate of change of
commutating current dIcom/dt versus junction
temperature, dVcom/dt = 20V/µs
February 2000
5
Rev 1.000