BTA208XD Datasheet, PDF (2/7 Pages) NXP Semiconductors – Three quadrant triacs guaranteed commutation

Philips Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA208X series D, E and F
ISOLATION LIMITING VALUE & CHARACTERISTIC
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_isol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
C_isol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
- 2500 V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-hs}
Thermal resistance
junction to heatsink
R_{th j-a}
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
MIN. TYP. MAX. UNIT
-
-
4.5 K/W
-
-
6.5 K/W
-
55
- K/W
STATIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
I_GT
Gate trigger current²
CONDITIONS
MIN. TYP.
MAX.
UNIT
BTA208X-
...D ...D ...E ...F
V_D = 12 V; I_T = 0.1 A
T2+ G+
T2+ G-
T2- G-
-
0.8 5
10 25 mA
-
2.0 5
10 25 mA
-
3.2 5
10 25 mA
I_L
Latching current
V_D = 12 V; I_GT = 0.1 A
T2+ G+
T2+ G-
T2- G-
-
7.2 15 25 30 mA
-
8.2 25 30 40 mA
- 11.0 25 30 40 mA
I_H
Holding current
V_D = 12 V; I_GT = 0.1 A
-
5.3 15 25 30 mA
...D, E, F
V_T
On-state voltage
I_T = 10 A
-
1.3
1.65
V
V_GT
Gate trigger voltage
V_D = 12 V; I_T = 0.1 A
-
0.7
1.5
V
V_D = 400 V; I_T = 0.1 A;
0.25 0.4
-
V
T_j = 125 ˚C
I_D
Off-state leakage current V_D = V_DRM(max);
-
0.1
0.5
mA
T_j = 125 ˚C
2 Device does not trigger in the T2-, G+ quadrant.
February 2000
2
Rev 1.000