BTA208XD Datasheet, PDF (3/7 Pages) NXP Semiconductors – Three quadrant triacs guaranteed commutation

Philips Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA208X series D, E and F
DYNAMIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
BTA208X- ...D
dV_D/dt
dI_com/dt
dI_com/dt
Critical rate of rise of
off-state voltage
V_DM = 67% V_DRM(max);
20
T_j = 110 ˚C; exponential
waveform; gate open
circuit
Critical rate of change of V_DM = 400 V; T_j = 110 ˚C; 1.8
commutating current
I_T(RMS) = 8 A;
dV_com/dt = 20V/µs; gate
open circuit
Critical rate of change of V_DM = 400 V; T_j = 110 ˚C; 5
commutating current
I_T(RMS) = 8 A;
dV_com/dt = 0.1V/µs; gate
open circuit
t_gt
Gate controlled turn-on I_TM = 12 A; V_D = V_DRM(max); -
time
I_G = 0.1 A; dI_G/dt = 5 A/µs
MIN.
TYP. MAX. UNIT
...E ...F ...D
60 70 60
- V/µs
3.5
5
8.5
- A/ms
16 19 100 - A/ms
...D, E, F
-
-
2
-
µs
February 2000
3
Rev 1.000