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| BFU590Q_15 Datasheet, PDF (5/19 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
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NXP Semiconductors
BFU590Q
NPN wideband silicon RF transistor
Table 9. Characteristics â¦continued
Tamb = 25 ï°C unless otherwise specified
Symbol Parameter
Gp(max) maximum power gain
ï¼s21ï¼2
insertion power gain
PL(1dB) output power at 1 dB gain compression
Conditions
f = 433 MHz; VCE = 8 V
IC = 10 mA
IC = 50 mA
IC = 80 mA
f = 900 MHz; VCE = 8 V
IC = 10 mA
IC = 50 mA
IC = 80 mA
f = 1800 MHz; VCE = 8 V
IC = 10 mA
IC = 50 mA
IC = 80 mA
f = 433 MHz; VCE = 8 V
IC = 10 mA
IC = 50 mA
IC = 80 mA
f = 900 MHz; VCE = 8 V
IC = 10 mA
IC = 50 mA
IC = 80 mA
f = 1800 MHz; VCE = 8 V
IC = 10 mA
IC = 50 mA
IC = 80 mA
f = 433 MHz; VCE = 8 V; ZS = ZL = 50 ï
IC = 50 mA
IC = 80 mA
f = 900 MHz; VCE = 8 V; ZS = ZL = 50 ï
IC = 50 mA
IC = 80 mA
f = 1800 MHz; VCE = 8 V; ZS = ZL = 50 ï
IC = 50 mA
IC = 80 mA
Min Typ
[1]
- 17
- 17.5
- 17.5
[1]
- 11
- 11
- 11
[1]
-6
- 6.5
- 6.5
- 14.5
- 16
- 16
-9
- 10
- 10
- 3.5
- 4.5
- 4.5
- 20.5
- 23
- 20
- 22
- 19.5
- 22
Max Unit
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dBm
- dBm
- dBm
- dBm
- dBm
- dBm
BFU590Q
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 28 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
5 of 19
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