BFU590Q_15 Datasheet, PDF (13/19 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

NXP Semiconductors
BFU590Q
NPN wideband silicon RF transistor
10. Application information
More information about the following application example can be found in the application
notes. See Section 5 “Design support”.
The following application example can be implemented using the evaluation kit. See
Section 3 “Ordering information” for the order type number.
The following application example can be simulated using the simulation package. See
Section 5 “Design support”.
10.1 Application example: 433 MHz PA
More detailed information of the application example can be found in the application note:
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Fig 22. Schematic 433 MHz power amplifier
DDD
Remark: fine tuning of components maybe required depending on PCB parasitics.
Table 10. Application performance data at 433 MHz
I_CC = 100 mA; V_CC = 8 V
Symbol Parameter
Conditions
s₂₁²
insertion power gain
s₁₁²
input return loss
P_L(1dB) output power at 1 dB gain compression
_C
collector efficiency
Min Typ Max Unit
- 15 -
dB
- 7 -
dB
- 26 -
dBm
- 60 -
%
BFU590Q
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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