BFU590Q_15 Datasheet, PDF (14/19 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

NXP Semiconductors
BFU590Q
NPN wideband silicon RF transistor
10.2 Application example: 866 MHz PA
More detailed information of the application example can be found in the application note:
AN11502.
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Fig 23. Schematic 866 MHz power amplifier
DDD
Remark: fine tuning of components maybe required depending on PCB parasitics.
Table 11. Application performance data at 866 MHz
I_CC = 100 mA; V_CC = 8 V
Symbol Parameter
Conditions
s₂₁²
s₁₁²
insertion power gain
input return loss
P_L(1dB) output power at 1 dB gain compression
_C
collector efficiency
Min Typ Max Unit
- 10 -
dB
- 12 -
dB
- 27 -
dBm
- 55 -
%
BFU590Q
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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