BFT92W_15 Datasheet, PDF (5/14 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

NXP Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT92W
30
gain
(dB)
20
10
MLB544
MSG
G _UM
0
0
10
20
30
IC (mA)
f = 500 MHz; V_CE = 10 V.
MSG = maximum stable gain.
Fig.6 Gain as a function of collector current,
typical values.
30
gain
(dB)
20
10
MLB545
MSG
G _UM
0
0
10
20
30
IC (mA)
f = 1 GHz; V_CE = 10 V.
MSG = maximum stable gain.
Fig.7 Gain as a function of collector current,
typical values.
50
gain
(dB)
40
G _UM
30 MSG
MLB546
20
10
G _max
0
10
10²
10³
10⁴
f (MHz)
I_C = 5 mA; V_CE = 10 V.
MSG = maximum stable gain.
Fig.8 Gain as a function of frequency,
typical values.
May 1994
50
gain
(dB)
40
30
G _UM
MSG
MLB547
20
10
G _max
0
10
10²
10³
10⁴
f (MHz)
I_C = 15 mA; V_CE = 10 V.
MSG = maximum stable gain.
Fig.9 Gain as a function of frequency,
typical values.
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