BFT92W_15 Datasheet, PDF (3/14 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

NXP Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT92W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
up to T_s = 93 C; note 1
MIN.





65

MAX.
20
15
2
25
300
+150
150
UNIT
V
V
V
mA
mW
C
C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-s}
thermal resistance from junction to soldering point up to T_s = 93 C; note 1
Note to the “Limiting values” and “Thermal characteristics”
1. T_s is the temperature at the soldering point of the collector pin.
VALUE
190
UNIT
K/W
CHARACTERISTICS
T_j = 25 C (unless otherwise specified).
SYMBOL
PARAMETER
I_CBO
collector cut-off current
h_FE
DC current gain
f_T
transition frequency
C_c
collector capacitance
C_e
emitter capacitance
C_re
feedback capacitance
G_UM
maximum unilateral power gain;
note 1
F
noise figure
CONDITIONS
I_E = 0; V_CB = 10 V
I_C = 15 mA; V_CE = 10 V
I_C = 15 mA; V_CE = 10 V;
f = 500 MHz; T_amb = 25 C
I_E = i_e = 0; V_CB = 10 V;
f = 1 MHz
I_C = i_c = 0; V_EB = 0.5 V;
f = 1 MHz
I_C = 0; V_CB = 10 V;
f = 1 MHz
I_C = 15 mA; V_CE = 10 V;
f = 500 MHz; T_amb = 25 C
I_C = 15 mA; V_CE = 10 V;
f = 1 GHz; T_amb = 25 C
_s = _opt; I_C = 5 mA;
V_CE = 10 V; f = 500 MHz
_s = _opt; I_C = 5 mA;
V_CE = 10 V; f = 1 GHz
MIN.

20

TYP.

50
4
MAX.
50


UNIT
nA
GHz

0.65 
pF

0.75 
pF

0.5

pF

17

dB

11

dB

2.5

dB

3

dB
Note
1.
G_UM is the maximum unilateral power gain, assuming s₁₂ is zero.
G_UM
=
10
log
-----------------------s----²--¹----²-----------------------
1 – s₁₁ ²ï€©ï€¨1 – s₂₂ ²ï€©
dB.
May 1994
3