BFT92W_15 Datasheet, PDF (2/14 Pages) NXP Semiconductors – PNP 4 GHz wideband transistor

NXP Semiconductors
PNP 4 GHz wideband transistor
Product specification
BFT92W
FEATURES
 High power gain
 Gold metallization ensures
excellent reliability
 SOT323 (S-mini) package.
APPLICATION
It is intended as a general purpose
transistor for wideband applications
up to 2 GHz.
DESCRIPTION
Silicon PNP transistor in a plastic,
SOT323 (S-mini) package. The
handbook, 2 columns
3
BFT92W uses the same crystal as the
SOT23 version, BFT92.
PINNING
PIN
DESCRIPTION
1 base
2 emitter
3 collector
1
Top view
2
MBC870
Marking code: W1.
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
I_C
P_tot
h_FE
C_re
f_T
G_UM
F
collector-base voltage
open emitter
collector-emitter voltage
open base
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
up to T_s = 93 C; note 1
I_C = 15 mA; V_CE = 10 V
I_C = 0; V_CB = 10 V; f = 1 MHz
I_C = 15 mA; V_CE = 10 V;
f = 500 MHz
maximum unilateral power gain I_C = 15 mA; V_CE = 10 V;
f = 500 MHz; T_amb = 25 C
noise figure
I_C = 5 mA; V_CE = 10 V;
f = 500 MHz
T_j
junction temperature
Note
1. T_s is the temperature at the soldering point of the collector pin.
MIN.




20





TYP.




50
0.5
4
17
2.5

MAX.
20
15
35
300



UNIT
V
V
mA
mW
pF
GHz

dB

dB
150
C
May 1994
2