BFS540 Datasheet, PDF (5/11 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFS540
In Figs 6 to 9, G_UM = maximum unilateral power gain;
MSG = maximum stable gain; G_max = maximum available
gain.
handbook, ²ha⁰lfpage
GUM
(dB)
16
VCE = 8 V
4V
12
MRC007
handbook, ¹ha⁵lfpage
gain
(dB)
10
5
8
MRC006
G _max
GUM
4
0
0
10
20
30
40
50
IC (mA)
f = 900 MHz; T_amb = 25 °C.
Fig.6 Maximum unilateral power gain as a
function of collector current.
0
0
20
V_CE = 8 V; f = 2 GHz; T_amb = 25 °C.
40
60
IC (mA)
Fig.7 Gain as a function of collector current.
50
handbook, halfpage
gain
(dB)
40
30
20
G _UM
MSG
10
0
10^−2
10^−1
MRC004
G _max
1
10
f (GHz)
I_C = 10 mA; V_CE = 8 V; T_amb = 25 °C.
Fig.8 Gain as a function of frequency.
November 1992
handbook, ⁵h⁰alfpage
gain
(dB)
40
30
20
10
0
10^−2
G _UM
MSG
10^−1
MRC005
G _max
1
10
f (GHz)
I_C = 40 mA; V_CE = 8 V; T_amb = 25 °C.
Fig.9 Gain as a function of frequency.
5