BFS540 Datasheet, PDF (2/11 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFS540
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability
• SOT323 envelope.
PINNING
PIN
DESCRIPTION
Code: N4
1 base
2 emitter
3 collector
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is intended for RF wideband
amplifier applications such as satellite
TV systems and RF portable
communication equipment with signal
frequencies up to 2 GHz.
handbook, 2 columns
3
1
Top view
2
MBC870
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
h_FE
f_T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
G_UM
maximum unilateral power gain
F
noise figure
CONDITIONS
open emitter
open base
up to T_s = 80 °C; note 1
I_C = 40 mA; V_CE = 8 V; T_j = 25 °C
I_C = 40 mA; V_CE = 8 V; f = 1 GHz;
T_amb = 25 °C
I_C = 40 mA; V_CE = 8 V; f = 900 MHz;
T_amb = 25 °C
I_C = 10 mA; V_CE = 8 V; f = 900 MHz;
T_amb = 25 °C
MIN. TYP. MAX. UNIT
−
−
−
−
−
−
−
−
20 V
15 V
120 mA
500 mW
60 120 250
−
9
−
GHz
−
14 −
dB
−
1.3 1.7 dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CES
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
R_BE = 0
open collector
up to T_s = 80 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector tab.
November 1992
2
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
2.5
120
500
150
175
UNIT
V
V
V
mA
mW
°C
°C