BFS540 Datasheet, PDF (4/11 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFS540
handboo⁴k,⁰h⁰alfpage
Ptot
(mW)
300
MRC008 - 1
200
100
0
0
50
100
150
200
Ts (^o C)
V_CE ≤ 10 V.
Fig.2 Power derating curve.
handbook², ⁰ha⁰lfpage
h _FE
150
MRC010
100
50
0
10^−2
10^−1
1
10
10²
IC (mA)
V_CE = 8 V; T_j = 25 °C.
Fig.3 DC current gain as a function of collector
current.
1
hand_Cb_ro_eok, halfpage
(pF)
0.8
MRC001
0.6
0.4
0.2
0
0
2
4
6
8
10
12
VCB (V)
I_C = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage.
handbook,¹h²alfpage
fT
(GHz)
8
4
MRC002
VCE = 8 V
4V
0
1
10
IC (mA)
10²
f = 1 GHz; T_amb = 25 °C.
Fig.5 Transition frequency as a function of
collector current.
November 1992
4