BFQ67T Datasheet, PDF (5/12 Pages) NXP Semiconductors – NPN 8 GHz wideband transistor

Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFQ67T
In Figs 6 to 9, G_UM = maximum unilateral power gain; MSG = maximum stable gain; G_max = maximum available gain.
handbook,²h⁰alfpage
gain
(dB)
15
10
MRC042
MSG
G _max
G _UM
5
0
0
5 10 15 20
V_CE = 8 V; f = 1 GHz; T_amb = 25 °C.
25 30 35
IC (mA)
Fig.6 Gain as a function of collector current.
handbook, h⁵a⁰lfpage
gain
(dB)
40
G _UM
MRC040
30
MSG
20
10
G _max
0
10^−2
10^−1
1 _{f (GHz)} 10
I_C = 5 mA; V_CE = 8 V; T_amb = 25 °C.
Fig.7 Gain as a function of frequency.
50
handbook, halfpage
gain
(dB)
40
G _UM
30
MSG
20
10
0
10^−2
10^−1
MRC041
G _max
1 _{f (GHz)} 10
I_C = 15 mA; V_CE = 8 V; T_amb = 25 °C.
Fig.8 Gain as a function of frequency.
handbook, ⁵ha⁰lfpage
gain
(dB)
40
G _UM
30
MSG
20
10
0
10^−2
10^−1
MRC043
G _max
1
10
f (GHz)
I_C = 30 mA; V_CE = 8 V; T_amb = 25 °C.
Fig.9 Gain as a function of frequency.
2000 Mar 06
5