BFQ67T Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN 8 GHz wideband transistor

Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFQ67T
200
Ptot
(mW)
150
MGU068
100
50
0
0
50
100
150
200
Ts (°C)
Fig.2 Power derating curve.
handboo¹k,²h⁰alfpage
h _FE
80
MBB301
40
0
0
20
40
60
I _C (mA)
V_CE = 5 V; T_j = 25 °C.
Fig.3 DC current gain as a function of collector
current.
0.8
handbook, halfpage
Cre
(pF)
0.6
MRC039
0.4
0.2
0
0
4
8
12
VCB (V)
I_C = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage.
2000 Mar 06
10
handbook, halfpage
fT
(GHz)
8
MBB303
6
4
2
0
0
10
20
30
40
IC (mA)
V_CE = 8 V; f = 2 GHz; T_amb = 25 °C.
Fig.5 Transition frequency as a function of
collector current.
4