BFQ67T Datasheet, PDF (3/12 Pages) NXP Semiconductors – NPN 8 GHz wideband transistor

Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFQ67T
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction to soldering point
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C; unless otherwise specified.
SYMBOL
I_CBO
h_FE
C_c
C_e
C_re
f_T
PARAMETER
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
G_UM
maximum unilateral power gain
F
noise figure
CONDITIONS
MIN.
I_E = 0; V_CB = 5 V
−
I_C = 15 mA; V_CE = 5 V
60
I_E = i_e = 0; V_CB = 8 V; f = 1 MHz −
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz −
I_C = 0; V_CE = 8 V; f = 1 MHz
−
I_C = 15 mA; V_CE = 8 V; f = 2 GHz; −
T_amb = 25 °C
I_C = 15 mA; V_CE = 8 V;
T_amb = 25 °C; note 1
f = 1 GHz
−
f = 2 GHz
−
Γ_s = Γ_opt; I_C = 5 mA; V_CE = 8 V;
f = 1 GHz
−
f = 2 GHz
−
Γ_s = Γ_opt; I_C = 15 mA; V_CE = 8 V;
f = 1 GHz
−
f = 2 GHz
−
V_CE = 8 V; f = 2 GHz; Z_s = 60 Ω;
I_C = 5 mA
−
I_C = 15 mA
−
TYP.
−
100
0.7
1.3
0.5
8
13
8
1.3
2.2
2
2.7
2.5
3
MAX. UNIT
50
nA
−
−
pF
−
pF
−
pF
−
GHz
−
dB
−
dB
−
dB
−
dB
−
dB
−
dB
−
dB
−
dB
Note
1. G_UM is the maximum unilateral power gain, assuming S₁₂ is zero and G_UM = 10 log ₍---1-----_–------_S----₁---₁---^S-₂---₎-²-₍-¹--1--²---_–------_S----₂---₂----₂---₎ dB
2000 Mar 06
3