BFG25AW Datasheet, PDF (5/16 Pages) NXP Semiconductors – NPN 5 GHz wideband transistors

Philips Semiconductors
NPN 5 GHz wideband transistors
Product specification
BFG25AW; BFG25AW/X
30
handbook, halfpage
gain
(dB)
20
10
MLB973
G _UM
MSG
30
handbook, halfpage
gain
(dB)
20
10
MLB974
G _UM
MSG
0
0
1
2
3
IC (mA)
f = 500 MHz; V_CE = 1 V.
Fig.6 Gain as a function of collector current;
typical values.
0
0
1
2
3
IC (mA)
f = 1 GHz; V_CE = 1 V.
Fig.7 Gain as a function of collector current;
typical values.
50
hand_gbo_ao_ink, halfpage
(dB)
40 _{G UM}
30
MSG
20
10
0
10
10²
MLB975
10³
10⁴
f (MHz)
50
hand_gbo_ao_ink, halfpage
(dB)
40 _{G UM}
30
MSG
20
10
0
10
10²
MLB976
10³
10⁴
f (MHz)
I_C = 0.5 mA; V_CE = 1 V.
Fig.8 Gain as a function of frequency;
typical values.
1998 Sep 23
I_C = 1 mA; V_CE = 1 V.
Fig.9 Gain as a function of frequency;
typical values.
5