BFG25AW Datasheet, PDF (10/16 Pages) NXP Semiconductors – NPN 5 GHz wideband transistors

Philips Semiconductors
NPN 5 GHz wideband transistors
Product specification
BFG25AW; BFG25AW/X
SPICE parameters for the BFG25W crystal
SEQUENCE No. PARAMETER VALUE UNIT
1
IS
13.77 aA
2
BF
85.65 −
3
NF
0.980 −
4
VAF
50.80 V
5
IKF
10.00 A
6
ISE
2.199 fA
7
NE
1.857 −
8
BR
16.97 −
9
NR
0.986 −
10
VAR
2.491 V
11
IKR
188.0 mA
12
ISC
205.1 aA
13
14
15
16
17
18
19⁽¹⁾
20⁽¹⁾
21⁽¹⁾
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
1.107 −
80.00 Ω
1.000 µA
80.00 Ω
7.911 Ω
5.300 Ω
0.000 −
1.110 eV
3.000 −
22
CJE
223.0 fF
23
VJE
669.7 mV
24
MJE
0.060 −
25
TF
5.112 ps
26
XTF
7.909 −
27
VTF
1.338 V
28
ITF
5.662 mA
29
PTF
15.37 deg
30
CJC
229.0 fF
31
VJC
394.7 mV
32
33
34
35 ⁽¹⁾
MJC
XCJC
TR
CJS
0.043 −
0.050 −
13.26 ns
0.000 F
SEQUENCE No.
36⁽¹⁾
37⁽¹⁾
38
PARAMETER
VJS
MJS
FC
VALUE UNIT
750.0 mV
0.000 −
0.988 −
Note
1. These parameters have not been extracted, the
default values are shown.
handbook, halfpage
C _cb
L1
B
C _be
LB
B' C'
E'
LE
L3
L2
C
Cce
MBC964
E
QL_B = 50; QL_E = 50; QL_B,E(f) = QL_B,E√(f/f_c);
f_c = scaling frequency = 1 GHz.
Fig.19 Package equivalent circuit SOT343N.
List of components (see Fig.19)
DESIGNATION
C_be
C_cb
C_ce
L1
L2
L3
L_B
L_E
VALUE
70
50
115
0.34
0.10
0.25
0.40
0.40
UNIT
fF
fF
fF
nH
nH
nH
nH
nH
1998 Sep 23
10