BFG25AW Datasheet, PDF (2/16 Pages) NXP Semiconductors – NPN 5 GHz wideband transistors

Philips Semiconductors
NPN 5 GHz wideband transistors
Product specification
BFG25AW; BFG25AW/X
FEATURES
• Low current consumption
(100 µA to 1 mA)
• Low noise figure
• Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in UHF low
power amplifiers, such as pocket
telephones and paging systems.
DESCRIPTION
NPN silicon planar epitaxial transistor
in a 4-pin dual-emitter SOT343N
plastic package.
PINNING
PIN
DESCRIPTION
BFG25AW
1 collector
2 base
3 emitter
4 emitter
BFG25AW/X
1 collector
2 emitter
3 base
4 emitter
fpage
4
3
1
Top view
2
MBK523
Fig.1 SOT343N.
MARKING
TYPE NUMBER
BFG25AW
BFG25AW/X
CODE
N6
V1
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
h_FE
C_re
f_T
G_UM
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
F
noise figure
CONDITIONS
MIN.
open emitter
−
open base
−
−
T_s ≤ 85 °C
−
I_C = 0.5 mA; V_CE = 1 V
50
I_C = 0; V_CE = 1 V; f = 1 MHz
−
I_C = 1 mA; V_CE = 1 V; f = 500 MHz; T_amb = 25 °C 3.5
I_C = 0.5 mA; V_CE = 1 V; f = 1 GHz; T_amb = 25 °C −
Γ_s = Γ_opt; I_C = 1 mA; V_CE = 1 V; f = 1 GHz
−
TYP.
−
−
−
−
80
0.2
5
16
2
MAX. UNIT
8
V
5
V
6.5 mA
500 mW
200
0.3 pF
−
GHz
−
dB
−
dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
T_s ≤ 85 °C; see Fig.2; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
1998 Sep 23
2
MIN.
−
−
−
−
−
−65
−
MAX.
8
5
2
6.5
500
+150
175
UNIT
V
V
V
mA
mW
°C
°C